型号 IPD80N06S3-09
厂商 Infineon Technologies
描述 MOSFET N-CH 55V 80A TO252-3
IPD80N06S3-09 PDF
代理商 IPD80N06S3-09
产品变化通告 Product Discontinuation 22/Jul/2010
标准包装 2,500
系列 OptiMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 55V
电流 - 连续漏极(Id) @ 25° C 80A
开态Rds(最大)@ Id, Vgs @ 25° C 8.4 毫欧 @ 40A,10V
Id 时的 Vgs(th)(最大) 4V @ 55µA
闸电荷(Qg) @ Vgs 88nC @ 10V
输入电容 (Ciss) @ Vds 6100pF @ 25V
功率 - 最大 107W
安装类型 表面贴装
封装/外壳 TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装 PG-TO252-3
包装 带卷 (TR)
其它名称 SP000264473
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